发明名称 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR
摘要 An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
申请公布号 US2011053315(A1) 申请公布日期 2011.03.03
申请号 US20100871642 申请日期 2010.08.30
申请人 CHO SEUNG HWAN;KIM BO SUNG;SONG KEUN KYU 发明人 CHO SEUNG HWAN;KIM BO SUNG;SONG KEUN KYU
分类号 H01L51/30 主分类号 H01L51/30
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