| 摘要 |
A method is provided for creating optical features on a lithography mask for use in patterning a series of openings of an etch mask on a semiconductor device wafer, comprising creating a series of optical features spaced on the lithography mask from one another along a first direction, where the individual optical features have first mask feature dimensions along the first direction that are smaller than a desired first dimension for the openings to be patterned in the etch mask. |
