| 摘要 |
PROBLEM TO BE SOLVED: To provide, in FINFET (FIN Field Effect Transistor) whose threshold voltage is determined essentially by the work function of a gate electrode, a technology capable of adjusting the threshold voltage of FINFET without changing the material of the gate electrode. SOLUTION: FINFET is formed over an SOI (Silicon On Insulator) substrate composed of a substrate layer 1S, a buried insulating layer BOX (Buried Oxide) formed over the substrate layer 1S, and a silicon layer formed over the buried insulating layer BOX. Then, a first semiconductor region FSR1 in contact with the buried insulating layer BOX is formed in the substrate layer 1S. In addition, The silicon layer of the SOI substrate is processed to form a fin FIN1. Then, a ratio of the fin height to the fin width of the fin FIN1 is adjusted to fall within a range of from 1 or greater but not greater than 2, and a voltage can be applied to the first semiconductor region FSR1. COPYRIGHT: (C)2011,JPO&INPIT
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