发明名称 |
POLISHING SOLUTION FOR CMP AND POLISHING METHOD |
摘要 |
<p>A polishing solution for CMP includes a medium and silica particles as abrasive grains dispersed in the medium. The polishing solution for CMP satisfies the following conditions: (A1) the silica particles have a silanol group density of 5.0 groups/nm2 or less; (B1) when arbitrary 20 particles are selected from an image obtained by observing the silica particles by a scanning electronic microscope, the particles have a two-axis average primary particle diameter of 25 to 55 nm; and (C1) the silica particles have an association degree of 1.1 or more. This provides a polishing solution for CMP having a high polishing speed to a barrier film, good dispersion stability of abrasive grains, and a high polishing speed to an interlayer insulating film and a polishing method in manufacturing, for example, a semiconductor substrate excellent in reduction in size, reduction in thickness, dimensional accuracy, and electric characteristics and having a high reliability and low cost.</p> |
申请公布号 |
WO2011021599(A1) |
申请公布日期 |
2011.02.24 |
申请号 |
WO2010JP63811 |
申请日期 |
2010.08.16 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD.;KANAMARU, MAMIKO;SHIMADA, TOMOKAZU;SHINODA, TAKASHI |
发明人 |
KANAMARU, MAMIKO;SHIMADA, TOMOKAZU;SHINODA, TAKASHI |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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