Magnetic tunnel junction device and method for manufacturing the same

摘要

The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A 100-x B x ) 100-y C y ; ii) an insulating layer disposed on the first magnetic layer; and iii) a second magnetic layer disposed on the insulating layer and including a compound having a chemical formula of (A 100-x B x ) 100-y C y . The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphized element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).