| 摘要 |
A method of forming a thin film on a substrate (152, 252) is described. The method comprises providing a substrate (152, 252) in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) (128) in the reduced- pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB (128) is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate (152, 252) according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate (152, 252) to achieve the thickness and the surface roughness. |
