| 摘要 |
A semiconductor device is comprised of a semiconductor element having a low dielectric constant insulating film, first electrode pads and barrier metal layers; and a substrate having second electrode pads corresponding to the first electrode pads. The first electrode pads and the second electrode pads are connected via metal bumps. The barrier metal layers having a thickness in a range of 0.1 to 3 μm are interposed between the metal bumps and the first electrode pads. Besides, when it is assumed that the barrier metal layers have a diameter D1, the second electrode pads have an opening diameter D2 and the metal bumps have a minimum pitch p, the diameter D1 of the barrier metal layers satisfies at least one of conditions of D1≧D2 and D1=0.4 p to 0.7 p. Thus, the occurrence of a crack, peeling or the like due to the low dielectric constant insulating films can be retarded. |
