| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CVD device for stably manufacturing a film on a substrate by preventing the deterioration of film quality at the beginning of film manufacturing without reducing a film manufacturing speed. <P>SOLUTION: This CVD device includes a chamber, a gas supply part for supplying raw material gas to a chamber, a gas exhaustion part for exhausting gas in the chamber, a cathode electrode having a gas supply hole opened in the chamber and communicatively connected to the gas supply part, and an anode electrode arranged at a position facing the cathode electrode on which the substrate is placed. The plasma of the raw material gas is generated in the neighborhood of the substrate side surface of the cathode electrode so that it is possible to form a thin film on the substrate. At least an openable/closeable shutter part covering the substrate surface is formed between the cathode electrode and the anode electrode. This shutter part is configured to permit the substrate to face the cathode electrode in a closed state, and to interrupt the substrate from facing the cathode electrode in a closed state. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
