AlxGa (1-x) AS SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa (1-x) AS SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED,申请号KR20107023851-传众专利搜索

发明名称	AlxGa (1-x) AS SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa (1-x) AS SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED
摘要
申请公布号	KR20110015522(A)	申请公布日期	2011.02.16
申请号	KR20107023851	申请日期	2009.05.27
申请人	SUMITOMO ELECTRIC INDUSTRIES, LTD.	发明人	TANAKA SO;MIYAHARA KENICHI;KITABAYASHI HIROYUKI;KATAYAMA KOJI;MORISHITA TOMONORI;MORIWAKE TATSUYA
分类号	H01L33/02;C30B19/12;C30B29/42;H01L21/20;H01L33/00	主分类号	H01L33/02
代理机构		代理人
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