发明名称 |
Predoped transfer gate for a CMOS image sensor |
摘要 |
A novel CMOS image sensor Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, a CMOS image sensor APS cell having a predoped transfer gate is formed that avoids the variations of Vt as a result of subsequent manufacturing steps. According to the preferred embodiment of the invention, the CMOS image sensor APS cell structure includes a doped p-type pinning layer and an n-type doped gate. There is additionally provided a method of forming the CMOS image sensor APS cell having a predoped transfer gate and a doped pinning layer. The predoped transfer gate prevents part of the gate from becoming p-type doped.
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申请公布号 |
US7888156(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20070864713 |
申请日期 |
2007.09.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ELLIS-MONAGHAN JOHN;JOHNSON JEFFREY B.;LOISEAU ALAIN |
分类号 |
H01L31/068 |
主分类号 |
H01L31/068 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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