发明名称 |
Method for fabricating a three-dimensional capacitor |
摘要 |
A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
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申请公布号 |
US7888231(B2) |
申请公布日期 |
2011.02.15 |
申请号 |
US20100662609 |
申请日期 |
2010.04.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;PARK SUNG-HO;CHOI SANG-JUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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