发明名称 |
ELECTRONIC DEVICE MANUFACTURE |
摘要 |
<p>PURPOSE: A method for manufacturing an electronic device is provided to manufacture an electronic device with a low dielectric constant material by using a multi layer of a backup porous dielectric material to form a pore after an aperture is etched and metal is filled. CONSTITUTION: A bottom dielectric layer(105) includes an etching stop unit(110) used as a copper diffusion barrier and a metal stud(100). A first backup-porous organic poly silica dielectric layer(120) is formed on the bottom dielectric layer. An etching stop layer(125) is formed on the first backup-porous organic poly silica dielectric layer. A second backup-porous dielectric layer(130) is formed on the etching stop layer. A spin-on backup-porous etching stop layer(135) is formed on the second backup-porous dielectric layer.</p> |
申请公布号 |
KR20110014540(A) |
申请公布日期 |
2011.02.11 |
申请号 |
KR20100133063 |
申请日期 |
2010.12.23 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
GRONBECK DANA A.;GALLAGHER MICHAEL K.;CALVERT JEFFREY M.;ADAMS TIMOTHY G. |
分类号 |
H01L21/31;H01L21/312;H01L21/288;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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