发明名称 |
LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to form a fluorescent insulating layer between nano structure patterns of a light emitting diode, thereby stably obtaining white light. CONSTITUTION: An n-type semiconductor layer(2) is formed on a substrate(101). An active layer(3) is formed on the n-type semiconductor layer. A p-type semiconductor layer(4) is formed on the active layer. The n-type semiconductor layer, the active layer, and the p-type semiconductor layer comprise concave-convex parts. The concave-convex parts include a protruded region and a flat region. A fluorescent insulating layer(7) surrounds the protruded region and the flat region.
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申请公布号 |
KR20110014521(A) |
申请公布日期 |
2011.02.11 |
申请号 |
KR20100075132 |
申请日期 |
2010.08.04 |
申请人 |
INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY |
发明人 |
KWAK, JOON SEOP;PARK, MIN JU;KANG, KI MAN |
分类号 |
H01L33/22;H01L33/20 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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