发明名称 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A light emitting diode and a manufacturing method thereof are provided to form a fluorescent insulating layer between nano structure patterns of a light emitting diode, thereby stably obtaining white light. CONSTITUTION: An n-type semiconductor layer(2) is formed on a substrate(101). An active layer(3) is formed on the n-type semiconductor layer. A p-type semiconductor layer(4) is formed on the active layer. The n-type semiconductor layer, the active layer, and the p-type semiconductor layer comprise concave-convex parts. The concave-convex parts include a protruded region and a flat region. A fluorescent insulating layer(7) surrounds the protruded region and the flat region.
申请公布号 KR20110014521(A) 申请公布日期 2011.02.11
申请号 KR20100075132 申请日期 2010.08.04
申请人 INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY 发明人 KWAK, JOON SEOP;PARK, MIN JU;KANG, KI MAN
分类号 H01L33/22;H01L33/20 主分类号 H01L33/22
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