发明名称 |
NON-PLANAR LOW-FREQUENCY POWER RECTIFIER DIODE AND METHOD OF MAKING SAID DIODE |
摘要 |
FIELD: physics. ^ SUBSTANCE: non-planar low-frequency power rectifier diode on working current over 1000 A and working voltage not lower than 1000 V has an inner contact on which is attached a non-planar semiconductor silicon structure having a tubular shape made from a solid silicon ingot grown the direction, on which a tubular external contact is attached. The inner contact is in form of a copper bushing with a longitudinal inner cavity for passage of coolant or is in form of a flexible copper spiral wound winding to winding, on whose outer surface of which a band in form of a molybdenum layer is soldered. The non-planar silicon semiconductor p+-p-n-n+ composition is a set of closed symmetrical semiconductor monocrystalline layers formed through diffusion on the base of a hollow substrate with walls of varying thickness. A protective dielectric layer is deposited on the surface of the faces of the composition on the output boundaries of the p-n junction. A highly doped p+ silicon region is formed on the outer surface of the non-planar structure by sputtering an aluminium layer for attaching the tubular external current-conducting contact. The non-planar semiconductor composition and the external current-conducting contact attached thereto are mounted between glass-ceramic washers attached to the band. ^ EFFECT: improved operational and technical characteristics. ^ 3 cl, 7 dwg |
申请公布号 |
RU2411611(C1) |
申请公布日期 |
2011.02.10 |
申请号 |
RU20090138804 |
申请日期 |
2009.10.21 |
申请人 |
GUNGER JURIJ ROBERTOVICH;KUZNETSOV EVGENIJ VIKTOROVICH |
发明人 |
GUNGER JURIJ ROBERTOVICH;KUZNETSOV EVGENIJ VIKTOROVICH;ABRAMOV PAVEL IVANOVICH;SELIVANOV OLEG JUSHEVICH |
分类号 |
H01L21/329;H01L29/861 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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