| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device reducing a gate leakage current when a bias direction bias is applied to a gate electrode. <P>SOLUTION: The nitride semiconductor device has a semiconductor layer laminate 103 comprising a first nitride semiconductor layer 104 and a second nitride semiconductor layer 105, which are sequentially formed on a substrate 101. A p-type third nitride semiconductor layer 108 is selectively formed on the semiconductor layer laminate 103, and a gate electrode 109 is formed on the third nitride semiconductor layer 108. A first ohmic electrode 106 and a second ohmic electrode 107 are formed on both sides of the third nitride semiconductor layer 108 on the semiconductor layer laminate 103. The first gate electrode 109 is brought into Schottky contact with the third nitride semiconductor 108. <P>COPYRIGHT: (C)2011,JPO&INPIT |
