OHMIC ELECTRODE AND METHOD OF FORMING THE SAME

摘要

There are provided an ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x = 0 (0.35 = y = 0.5), an expression y = -1.120X+0.5200 (0.1667 = x = 0.375), an expression y = 1.778(x-0.375)2+0.1 (0 = x = 0.375) and an expression y = -2.504x2-0.5828x+0.5 (0 = x = 0.1667) and that excludes the line expressed by the expression x = 0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.