| 摘要 |
783,923. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. July 20, 1955 [July 23, 1954], No. 21007/55. Class 37. A barrier layer semi-conductor device comprises a sealed envelope containing the semi-conductor body and the lead-in wires have a metal coating outside and adjacent the envelope which is provided after the sealing-in operation. In Fig. 1, glass tube 1 and glass cap 2 contain a transistor, and the lead-in wires 3 are covered with a copper coating 5 by electroplating after the envelope has been sealed. Alternatively, aluminium may be sprayed along part of the length of each lead wire, or copper wire or metal tape may be wound round one or more of the wires. The arrangement facilitates cooling of the semi-conductor body during operation, without aiding the transfer of heat to the body during manufacture which would occur if thick lead wires were used throughout. The invention may also be applied to a crystal diode. |
