| 摘要 |
PURPOSE:To obtain a fine, highly reliable insulating film with less strain for flattening, by applying a specified silicone resin on a substrate, and performing heat treatment. CONSTITUTION:A silicone resin, which is expressed by the Formula (where R represents at least 80%-H and-O-CH3 for the remaining part, and (n) represents an integer of 10-10<5>), is dissolved in a solvent as required and applied on a substrate. Then heat treatment is performed. Thus the irregular substrate can be flattened. The resin is a ladder type silicone resin, which has a silyl form. At least 80 deg. of a group, which is bonded to Si, is hydrogen-H, and the remaining part is-O-CH3. At this time, the volume of scattering hydrogen at the time of thermal decomposition is small. Therefore, pinholes due to this phenomenon are small, and the strain of the film is less. In general, since the volume of a growing oxide film is increased, the yielded small pinholes are filled, and the strain is allevaited. Thus the fine, pure SiOx film is obtained.
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