发明名称 |
Memory Formed By Using Defects |
摘要 |
A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.
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申请公布号 |
US2011032765(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20090617516 |
申请日期 |
2009.11.12 |
申请人 |
NATIONAL TAIWAN UNIVERSITY |
发明人 |
CHEN YEN-TING;HUANG CHING-FANG;SUN HUNG-CHANG;LIU CHEE WEE |
分类号 |
G11C16/04;G11C11/34;H01L21/66 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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