| 摘要 |
PURPOSE:To enable the high density formation of capacitors of large capacitance, by alternately forming insulating films and conducting films in the form of multilayer, in trenches formed on a semiconductor substrate, and constituting a plurality of capacitors in the state of lamination. CONSTITUTION:On the surface of a P-type semiconductor substrate 1, an N-type epitaxial layer 2 is grown, a plurality of trenches 4 are formed thereon, an oxide film 5a is formed on the trenches 4 formed outside, an oxide film 5b is formed on the surface of the N-type epitaxial layer 2, and an N-type impurity diffusion region 6 is formed on the substrate 1 around the inside trenches 4 and the epitaxial layer 2. After that, a nitride film as a first insulating film 7 is formed on the inner surfaces of the trenches 4, a first conducting film 8 is formed of polysilicon inside the first insulating film 7, a nitride film 9 as a second insulating film 9 is formed inside the first conducting film 8, and further a second conducting film 10 is formed of polysilicon. |
