| 摘要 |
<p>PURPOSE: The fuse part of a semiconductor device and a method for manufacturing the same are provided to prevent the generation of cracks from the bottom side corner of a fuse box by forming the bottom side corner in an inclined shape. CONSTITUTION: A wiring layer(22) is formed on a substrate(21). A double fuse(24) is composed of a first conductive pattern(24A) and a second conductive pattern(24B). A protective film(26) covers the entire surface of a structure comprising the double fuse. A first fuse box(27A) and a second fuse box(27B) expose parts of the protective film, the first conductive pattern, and the second conductive pattern. A filling film(28) fills the first and the second fuse boxes.</p> |
