发明名称 Method for manufacturing a semiconductor device with reduced floating body effect
摘要 A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each situated extending a second depth within the substrate, the second depth not equal to the first depth.
申请公布号 US7883979(B2) 申请公布日期 2011.02.08
申请号 US20040973966 申请日期 2004.10.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN HUNG-WEI;XUAN ZHONG TANG;CHENG SHUI-MING;LIU SHENG-DA
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
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