发明名称 Method of manufacturing an actuator device
摘要 A method of manufacturing an actuator device includes forming a Zr layer on one surface of a substrate, forming a ZrO2 layer by oxidizing the Zr layer, forming a lower electrode on top of the ZrO2 layer, forming a piezoelectric layer on top of the lower electrode, and forming an upper electrode on top of the piezoelectric layer. In the method, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and the Zr layer thus formed has special crystal regions that protrude from the opposite surface of the Zr layer from the substrate. Each special crystal region has a height of 10 to 100 nm and a diameter of 0.1 to 1μm when viewed from above, and the special crystal regions exist with a density of 1.0×106 to 1.0×103/cm2.
申请公布号 US7882607(B2) 申请公布日期 2011.02.08
申请号 US20070869261 申请日期 2007.10.09
申请人 SEIKO EPSON CORPORATION 发明人 LI XIN-SHAN
分类号 H01L41/053;H02N2/04 主分类号 H01L41/053
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