| 摘要 |
Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 1018 cm−3; a boron dopant having a concentration of approximately 1016 cm−3; and an aluminum dopant having a concentration of approximately 1015 cm−3. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.
|
