发明名称 NANOWIRE SYNTHESIS
摘要 <p>A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. Nanowires having a predetermined diameter and a predetermined position can be grown from the nanoparticles.</p>
申请公布号 WO2011014408(A1) 申请公布日期 2011.02.03
申请号 WO2010US42945 申请日期 2010.07.22
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;GRADECAK, SILVIJA;TSENG, CHUN-HAO;TAMBE, MICHAEL, JOSEPH;SMITH, MATTHEW, JOHN 发明人 GRADECAK, SILVIJA;TSENG, CHUN-HAO;TAMBE, MICHAEL, JOSEPH;SMITH, MATTHEW, JOHN
分类号 C30B29/42;C30B25/00;C30B25/18;C30B29/62 主分类号 C30B29/42
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