<p>A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. Nanowires having a predetermined diameter and a predetermined position can be grown from the nanoparticles.</p>
申请公布号
WO2011014408(A1)
申请公布日期
2011.02.03
申请号
WO2010US42945
申请日期
2010.07.22
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;GRADECAK, SILVIJA;TSENG, CHUN-HAO;TAMBE, MICHAEL, JOSEPH;SMITH, MATTHEW, JOHN
发明人
GRADECAK, SILVIJA;TSENG, CHUN-HAO;TAMBE, MICHAEL, JOSEPH;SMITH, MATTHEW, JOHN