| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which has excellent erasure characteristics by suppressing reverse implantation of electrons during erasure at a connection part connecting two semiconductor pillars, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor memory device includes a laminated structure ML having pluralities of electrode films WL and inter-electrode insulating films 14 which are laminated alternately in a first direction, semiconductor pillars SP penetrating the laminated structure in the first direction, a connection part semiconductor layer CP connecting the semiconductor pillars to each other, a connection part conductive layer BG opposed to the connection part semiconductor layer, a memory layer 48, an inner insulating film 42, an outer insulating film 43, and a connection part outer insulating film 44. The memory layer is provided between the electrode films and semiconductor pillars, and between the connection part conductive layer and connection part semiconductor layer, and the inner insulating film is provided between the memory layer and semiconductor pillars, and between the memory layer and connection part semiconductor layer; and the outer insulating film is provided between the electrode films and memory layer, and the connection part outer insulating film is provided between the memory layer and connection part conductive layer and is thicker than the outer insulating film of the semiconductor pillars. COPYRIGHT: (C)2011,JPO&INPIT |
