| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device suppressing an in-plane dispersion of line widths of a pattern formed on an etching object material. SOLUTION: A dispersion of line widths of a first pattern and a second pattern occurring due to dispersion occurring in resist patterns (an opening 111, an opening 211) due to dispersion of lithography when forming a first pattern and a second pattern in the first region 110 and the second region 210 of an etching object material 105, respectively, is suppressed by adjusting the thickness of a mask material 106. COPYRIGHT: (C)2011,JPO&INPIT
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