发明名称 |
METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A PHOTODETECTOR |
摘要 |
A method is provided for integrating a germanium photodetector with a CMOS circuit. The method comprises: forming first and second isolation regions in a silicon substrate; forming a gate electrode in the first isolation region; implanting source/drain extensions in the silicon substrate adjacent to the gate electrode; forming a first sidewall spacer on the gate electrode; implanting source/drain regions in the silicon substrate; removing the first sidewall spacer from the gate electrode; forming a first protective layer over the first and second isolation regions; removing a portion of the first protective layer to form an opening over the second isolation region; forming a semiconductor material comprising germanium in the opening; forming a second protective layer over the first and second isolation regions; selectively removing the first and second protective layers from the first isolation region; and forming contacts to the transistor and to the semiconductor material.
|
申请公布号 |
US2011027950(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20090510358 |
申请日期 |
2009.07.28 |
申请人 |
JONES ROBERT E;DENNING DEAN J;SPENCER GREGORY S |
发明人 |
JONES ROBERT E.;DENNING DEAN J.;SPENCER GREGORY S. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|