| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device wherein interference between cells in the bit-line direction is eliminated, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor memory device includes: a semiconductor substrate 1; an element-isolation insulating film 2 for separating the semiconductor substrate 1 into a plurality of element regions; a tunnel insulating film 3, formed on the element regions of the semiconductor substrate 1; floating gate electrodes 4 formed on the tunnel insulating film 3; a first control gate electrode 6 formed on the floating gate electrodes 4 and between the floating gate electrodes 4 adjacent in the channel width direction, via a laminated insulating film 5; an assist insulation film 7, formed on a side face of the element regions of the semiconductor substrate 1 which faces the channel width direction; and second control gate electrodes 8, formed between the plurality of element regions via the assist insulating film 7. COPYRIGHT: (C)2011,JPO&INPIT
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