发明名称 Mask etch processing apparatus
摘要 Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
申请公布号 US7879151(B2) 申请公布日期 2011.02.01
申请号 US20060530676 申请日期 2006.09.11
申请人 APPLIED MATERIALS, INC. 发明人 NGUYEN KHIEM;SATITPUNWAYCHA PETER;MAK ALFRED W.
分类号 C23C16/00;C23C16/458;H01J37/32;H01L21/306;H01L21/687 主分类号 C23C16/00
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