发明名称 Lithographic method and patterning device
摘要 A lithographic method includes patterning a beam of radiation with a patterning device. The patterning device includes at least two image patterning portions and at least two metrology mark patterning portions. The method also includes projecting at least two image portions of the patterned beam of radiation sequentially onto target portions of a substrate such that the projected image portions are substantially adjacent to each other on the substrate and collectively form a composite image on the substrate. The method also includes projecting a metrology mark onto the substrate outside of the area of the composite image at the same time as projecting each of at least two of the image portions, and measuring the alignment of the metrology marks to determine the relative positions of the at least two image portions.
申请公布号 US7879514(B2) 申请公布日期 2011.02.01
申请号 US20060498980 申请日期 2006.08.04
申请人 ASML NETHERLANDS B.V. 发明人 PHILLIPPS GEOFFREY NORMAN;GUI CHENG-QUN;PELLENS RUDY JAN MARIA;VAN DIJK PAULUS WILHELMUS LEONARDUS
分类号 G03F9/00;G03C5/00;G03F1/00 主分类号 G03F9/00
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