发明名称 |
METHODS FOR PRODUCING SINGLE CRYSTAL SUBSTRATE, NH-SILICON CARBIDE SUBSTRATE AND 4H-SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND 4H-SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal substrate having a composite step-terrace structure comprising a downward step and an upward step on the surface of a single crystal.SOLUTION: The method for producing the single crystal substrate, which has the composite step-terrace structure comprising a first flat terrace, a first downward step, a second flat terrace and a second upward step having the height lower than that of the first downward step, comprises a step to etch an original single crystal substrate to form the composite step-terrace structure in a self-organizing manner. |
申请公布号 |
JP2011016703(A) |
申请公布日期 |
2011.01.27 |
申请号 |
JP20090163908 |
申请日期 |
2009.07.10 |
申请人 |
SUDA ATSUSHI |
发明人 |
SUDA ATSUSHI;KIMOTO TSUNENOBU |
分类号 |
C30B29/36;C30B33/12;H01L21/302 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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