发明名称 ANTI-FUSE ELEMENT
摘要 Disclosed is an anti-fuse element with which open-circuiting defects do not occur when short-circuiting is caused by the application of operating voltage. An anti-fuse element (10) is provided with: an insulating layer (22); a pair of electrode layers (21, 23) which are formed on the upper and lower surfaces of the insulating layer (22); and an extraction electrode (42) which is formed so as to make contact with the portion of the electrode layer (23) which generates electrostatic capacitance with the insulating layer (22). The anti-fuse element (10) is constructed so that, when voltage above the insulation breakdown voltage of the insulating layer (22) is applied, a structural change portion (29) is generated comprising: a short-circuiting section (27) in which short-circuiting occurs in such a way that the pair of electrode layers (21, 23) mutually fuse and engulf the insulating layer (22); and a dissipation section (28) in which the electrode layers (21, 23) and the insulating layer (22) are dissipated due to the insulating layer (22) being engulfed. The extraction electrode (42) has at least two portions which make contact with the electrode layer (23).
申请公布号 WO2011010702(A1) 申请公布日期 2011.01.27
申请号 WO2010JP62377 申请日期 2010.07.22
申请人 MURATA MANUFACTURING CO., LTD.;TANI SHINSUKE;NAKAISO TOSHIYUKI 发明人 TANI SHINSUKE;NAKAISO TOSHIYUKI
分类号 H01L21/82 主分类号 H01L21/82
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