发明名称 CAPACITOR STRUCTURE
摘要 The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.
申请公布号 US2011019335(A1) 申请公布日期 2011.01.27
申请号 US20100841456 申请日期 2010.07.22
申请人 WU SHIH-HSIEN;LEE MIN-LIN;LAI SHINN-JUH;LIU SHUR-FEN;CHEN MENG-HUA;HUNG CHIN-HSIEN 发明人 WU SHIH-HSIEN;LEE MIN-LIN;LAI SHINN-JUH;LIU SHUR-FEN;CHEN MENG-HUA;HUNG CHIN-HSIEN
分类号 H01G4/005 主分类号 H01G4/005
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