| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of ensuring superior temperature characteristics in a semiconductor sensor for detecting various physical quantities.SOLUTION: The semiconductor sensor 100 includes an element side substrate 2 and a sealing side substrate 8. A MEMS structure 22 having sensing function is formed on a part of the surface of the element side substrate 2. A recess 13 for storing the MEMS structure 22 is formed on the backside of the sealing side substrate 8. The backside of the sealing side substrate 8 is bonded to the surface of the element side substrate 2, and a sealing space 11 corresponding to the recess 13 is formed between the element side substrate 2 and the sealing side substrate 8. The MEMS structure 22 is sealed in the sealing space 191. A stress absorption part 14 is formed between an opening surface 8b of the recess 13 and a bottom 8a of the recess 13 on the sealing side substrate 8. When a thermal stress is generated between the sealing side substrate 8 and the element side substrate 2, the thermal stress is absorbed by the stress absorption part 14, to thereby reduce the stress applied to the element side substrate 2. |
