发明名称 |
TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER |
摘要 |
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
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申请公布号 |
US2011018031(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100893983 |
申请日期 |
2010.09.29 |
申请人 |
MURTHY ANAND;BOYANOV BOYAN;DATTA SUMAN;DOYLE BRIAN S;JIN BEEN-YIH;YU SHAOFENG;CHAU ROBERT |
发明人 |
MURTHY ANAND;BOYANOV BOYAN;DATTA SUMAN;DOYLE BRIAN S.;JIN BEEN-YIH;YU SHAOFENG;CHAU ROBERT |
分类号 |
H01L29/78;H01L21/28;H01L21/8234;H01L21/8238;H01L29/10;H01L29/49 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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