发明名称 INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR
摘要 Disclosed is an integrated circuit (IC) comprising a substrate (10) including a plurality of circuit elements and a metallization stack (20) covering said substrate for providing interconnections between the circuit elements, wherein the top metallization layer of said stack carries a plurality of metal portions (30) embedded in an exposed porous material (40) for retaining a liquid, said porous material laterally separating said plurality of metal portions. An electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.
申请公布号 US2011018097(A1) 申请公布日期 2011.01.27
申请号 US20100843809 申请日期 2010.07.26
申请人 NXP B.V. 发明人 PONOMAREV YOURI;HUMBERT AURELIE;DAAMEN ROEL
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
代理机构 代理人
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