| 摘要 |
PROBLEM TO BE SOLVED: To efficiently eliminate a resist film used as a mask in impurity ion injection and having an altered layer. SOLUTION: Ion impurities are injected using the resist film 107 formed on a glass substrate 100 as a mask, and processing using a flame of a gas burner consuming a mixed gas of hydrogen and oxygen as a fuel is executed in eliminating the resist film 107 having the altered layer 107a formed thereon, thereby eliminating the resist film 107. In this case, this processing is executed by first ashing further added with a halogen compound gas, and second ashing to be thereafter performed in an oxygen-rich condition where the composition ratio of oxygen is larger than 2 mol:1 mol as a stoichiometric composition ratio of water (H<SB>2</SB>O) in a mixed gas ratio of hydrogen and oxygen. COPYRIGHT: (C)2007,JPO&INPIT
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