| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which has a rectifying layer and a nonvolatile layer element at an intersection of a first wire and a second wire, the nonvolatile memory device having its thickness suppressed as compared with a nonvolatile memory device using a PIN diode as a rectifying layer and also making diode characteristics of the rectifying layer uniform.SOLUTION: The nonvolatile memory device includes a word line WL that extends in a first direction, a bit line BL that is formed at a height different from the word line WL and extends in a second direction, and a memory cell MC that is arranged to be sandwiched between the word line WL and the bit line BL at a position at which the word line WL and the bit line BL intersect with each other, and includes a resistance change element 10 and a rectifying element 20. The rectifying element 20 includes a laminate structure comprising a reverse electrode 21, an insulating film including a silicon nitride film 22, a metal oxide film 23 made of a metal oxide semiconductor, and a forward electrode 24. |
