ORGANIC SUBSTANCE REMOVING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an organic substance removing method for removing a hardened resist film generated after dry etching, a BARC film remaining on a lower layer of the resist film, and a residue or the like after dry etching present on a semiconductor substrate without executing ashing treatment.SOLUTION: An organic substance removing method is configured as follows. In a semiconductor manufacturing process, an organic substance film is formed on a substrate and an organic residue is generated when etching and/or polishing the organic substance film. A vacuum ultraviolet ray having an irradiation strength of 1-500 mW/cmis irradiated to the organic substance film and/or the organic residue at a distance of ≤2 mm in the atmosphere.