| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device including a means for detecting an amount of an ion flux of plasma (plasma density) and a device state on a distribution of the amount of an ion flux of plasma, wherein the amount of an ion flux of plasma is related to a stability in mass production and a reduction in a performance difference among chambers or devices.SOLUTION: In a plasma processing device including a vacuum container 108, a gas inlet means 111, a pressure control means, a plasma source power supply 101, a lower electrode 113 mounting an object 112 to be processed inside the vacuum container and a high-frequency bias power supply 117, the plasma processing device includes: a probe high-frequency oscillation means 103 causing an oscillation in a plasma processing chamber at an oscillation frequency different from oscillation frequencies of the plasma source power supply 101 and the high-frequency bias power supply 117; high-frequency receivers 114 and 115 receiving the high-frequency oscillation oscillated from the probe high-frequency oscillation means 103 on a face contacting with plasma; and a high-frequency analysis means 110 measuring an impedance, reflectance and transmittance for every oscillation frequency in an electric circuit and a variation of a harmonic component, wherein the electric circuit is formed by the probe high-frequency oscillation means 103 and the receivers 114 and 115. |
