摘要 |
<p>Disclosed is a film-forming apparatus for forming a coating film on the surface of an object to be processed by using a sputtering method, which comprises: a chamber that contains the object to be processed and a target, which is the base material of the coating film, in such a manner that the object to be processed and the target face each other; an exhaust means for reducing the pressure within the chamber; a magnetic field-generating means for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas-introducing means for introducing a sputtering gas into the chamber; and a means for preventing incidence of sputtering particles on the object to be processed until the plasma generated between the target and the object to be processed becomes stable.</p> |