发明名称 |
Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe |
摘要 |
<p>Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.</p> |
申请公布号 |
DE102006034786(B4) |
申请公布日期 |
2011.01.20 |
申请号 |
DE20061034786 |
申请日期 |
2006.07.27 |
申请人 |
SILTRONIC AG |
发明人 |
KNERER, DIETER;HUBER, ANDREAS;LAMBERT, ULRICH;PASSEK, FRIEDRICH |
分类号 |
C30B33/02;C30B29/06 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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