| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has an improved ESD breakdown voltage, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device is characterized in that the capacity of a first power supply line 101 is increased by: having a circuit 103 for ESD protection between the first power supply line 101 and a first ground line 102, a first circuit 100 having an MISFET supplied with operating electric power from the first power supply line 101, and a capacitor 104 having a dielectric voltage higher than the gate dielectric voltage of the MISFET of the first circuit 100; and also having a second circuit supplied with operating electric power from a second power supply line between the second power supply line and a second ground line. COPYRIGHT: (C)2009,JPO&INPIT
|
