| 摘要 |
Gamma-, X-ray sensitive diode is arranged as diode that has basis with coating on which contact electrode is placed. As diode one uses at least one Shottky diode basis of which is made of zinc selenide doped with tellurium, and layer – of material with width of forbidden zone smaller or equal to energy of secondary photons with с, generated with material of basis, or energy levels in forbidden zone with energies |Еі-Ес| < Ес or (|Еі-Ev| < Ес). |
