| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal power MOSFET improved in efficiency of a power circuit and the like by reducing on-resistance per chip area.SOLUTION: In this horizontal power MOSFET, a low-resistance-punched conductive region penetrating from a semiconductor surface in a p-type semiconductor region on a low-resistance p-type semiconductor substrate 1 connected to an external source electrode to the p-type semiconductor region is formed; two or more n-type drain regions 8b electrically connected to drain electrodes 12a are formed in a semiconductor region caught by the low-resistance-punched conductive region; and an external drain region 16a on an active region is formed. |
