| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer, capable of improving surface flatness of an outer periphery of the epitaxial silicon wafer.SOLUTION: An epitaxial deposition condition is determined so that a zero value obtained by summing an average value of a wafer circumferential direction of backside deposition of a silicon wafer, an average value of wafer circumferential direction of SFQD of the outer periphery of the silicon wafer, and an average value of roll-off of wafer circumferential direction of the epitaxial film may be zero, and the roll-off of the epitaxial film is controlled. In this way, the surface flatness of the outer periphery of the epitaxial silicon wafer is improved. As this result, a flatness application region is expanded and the yield of devices is enhanced. |
