| 发明名称 |
PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME |
| 摘要 |
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| 申请公布号 |
KR20110003346(A) |
申请公布日期 |
2011.01.11 |
| 申请号 |
KR20107023512 |
申请日期 |
2009.03.18 |
| 申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
SEKIWA HIDEYUKI;KOBAYASHI JUN;MIYAMOTO MIYUKI;OHASHI NAOKI;SAKAGUCHI ISAO;WADA YOSHIKI |
| 分类号 |
C30B19/02;C30B29/16;C30B33/00;H01L21/368 |
主分类号 |
C30B19/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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