| 摘要 |
A radio frequency (RF) circuit (100) as disclosed herein is fabricated on a substrate (204, 304) using integrated passive device (IPD) process technology. The RF circuit (100) includes an RF inductor (200, 300) and an integrated inductive RF coupler (202, 302) located proximate to the RF inductor (200, 300). The inductive RF coupler (202, 302), its output and grounding contact pads, and its transmission lines are fabricated on the same substrate (204, 304) using the same IPD process technology. The inductive RF coupler (202, 302) includes a coupling section (212, 306) that is either located inside or outside a spiral of the RF inductor (200, 300). The inductive RF coupler (202, 302) and the RF inductor (200, 300) are cooperatively configured to function as the windings of an RF transformer, thus achieving the desired coupling. The inductive RF coupler (202, 302) provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit (100).
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