| 摘要 |
A method of forming a semiconductor device includes the following processes. A nitrogen-diffusion region is selectively formed in a semiconductor substrate having first and second regions. The nitrogen-diffusion region is at a shallow level of the first region. A first heat treatment is carried out to form a first oxide layer over the semiconductor substrate. The first oxide layer includes first and second portions. The first portion is in the first region. The second portion is in the second region. The first portion is thinner than the second portion.
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